materials
Reaction-sintered silicon carbide
Physical properties of Reaction-sintered silicon carbide SSiC (Q1)
Density | 3,10 – 3,15 g/cm3 |
Hardness | 2600 HV0,5 |
Porosity | 0,2 % |
Compression strength | 2200 MPa |
Purity (Content of SiC) | 99 % |
Modulus of elasticity | 400 GPa |
Thermal conductivity | 90 – 110 W/mK |
Maximum temperature | 1600 oC |
Coefficient of thermal expansion | 4,0.10-6/oC |