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Silicon carbide infiltrated by silicon

Physical properties of silicon carbide SiSiC (Q2), marked as KU 511

Density 3,05 g/cm3
Porosity 0,01 %
Hardness – SiC component 2690 HV 0,2
Hardness – Si component 1250 HV 0,2
Compression strength 3500 MPa
Bending strength (4 points method) 440 MPa
Modulus of elasticity (dynamic) 325 GPa
Thermal conductivity 120 W/mK
Thermal diffusivity 55 .10-6m2/s
Thermal expansion (20-200 oC) 3,4. 10-6/K
Temperature resistivity (in oxidizing atmosphere) 1350 oC
Temperature resistivity (in non-oxidizing atmosphere) 1

The properties of ceramic materials based on SiSiC remain constant up to the temperature of 1350 °C. High modulus of elasticity guarantees a high stability of dimensions. Thanks to these properties, the silicon carbide is predetermined for use as a construction material. Silicon carbide is toxicologically safe and can be used in food industry.

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