materials
Silicon carbide infiltrated by silicon
Physical properties of silicon carbide SiSiC (Q2), marked as KU 511
Density | 3,05 g/cm3 |
Porosity | 0,01 % |
Hardness – SiC component | 2690 HV 0,2 |
Hardness – Si component | 1250 HV 0,2 |
Compression strength | 3500 MPa |
Bending strength (4 points method) | 440 MPa |
Modulus of elasticity (dynamic) | 325 GPa |
Thermal conductivity | 120 W/mK |
Thermal diffusivity | 55 .10-6m2/s |
Thermal expansion (20-200 oC) | 3,4. 10-6/K |
Temperature resistivity (in oxidizing atmosphere) | 1350 oC |
Temperature resistivity (in non-oxidizing atmosphere) | 1 |
The properties of ceramic materials based on SiSiC remain constant up to the temperature of 1350 °C. High modulus of elasticity guarantees a high stability of dimensions. Thanks to these properties, the silicon carbide is predetermined for use as a construction material. Silicon carbide is toxicologically safe and can be used in food industry.